Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors
نویسندگان
چکیده
We study the bias-temperature instability (BTI) on the back gate of double-gated graphene field-effect transistors (GFETs). The dependence of the resulting degradation on the stress time and oxide field is analyzed. Finally, the results are compared to the ones obtained on the high-k top gate of the same device.
منابع مشابه
Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors
We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare th...
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